SPB08P06P g sipmos ? power-transistor features ? p-channel ? enhancement mode ? avalanche rated ? d v /d t rated ? 175c operating temperature ? pb-free lead finishing; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c a t a =100 c pulsed drain current i d,pulse t a =25 c avalanche energy, single pulse e as i d =8.83 a, r gs =25 ? mj reverse diode d v /d t d v /d t i d =8.83 a, v ds =48 v, d i /d t =-200 a/s, t j,max =175 c kv/s gate source voltage v gs v power dissipation p tot t a =25 c w operating and storage temperature t j , t stg c esd class soldering temperature iec climatic category; din iec 68-1 55/150/56 "-55 ... +175" 20 -6 260 c -8.8 -6.3 42 value 70 -35.32 steady state v ds -60 v r ds(on),max 0.3 ? i d -8.8 a product summary type package tape and reel information marking lead free packing SPB08P06P pg-to263-3 yes pg-to263-3 rev 1.4 page 1 2008-02-18
SPB08P06P g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 3.6 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb: r thja minimal footprint - - 62 k/w 6 cm 2 cooling area 1) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a -60 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-250 a -2.1 3 -4 zero gate voltage drain current i dss v ds =-60 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-60 v, v gs =0 v, t j =150 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-10 v, i d =-6.2 a - 221 300 m : transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-6.2 a 2.4 4.8 - s 1) device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm 2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air . values rev 1.4 page 2 2008-02-18
SPB08P06P g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 335 420 pf output capacitance c oss - 105 135 reverse transfer capacitance c rss -6595 turn-on delay time t d(on) -1624ns rise time t r -4669 turn-off delay time t d(off) -4872 fall time t f -1421 gate charge characteristics gate to source charge q gs - -1.9 -2.6 nc gate to drain charge q gd --5-8 gate charge total q g - -10 -13 gate plateau voltage v plateau --6-v reverse diode diode continuous forward current i s - - -8.8 a diode pulse current i s,pulse - - -35.3 diode forward voltage v sd v gs =0 v, i f =-8.83 a, t j =25 c - -1 -1.55 v reverse recovery time t rr -6090ns reverse recovery charge q rr - 100 150 nc t a =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-30 v, v gs =- 10 v, i d =-6.2 a, r g =6 : v dd =-48 v, i d =-8.8 a, v gs =0 to -10 v v r =30 v, i f =| i s |, d i f /d t =100 a/s rev 1.4 page 3 2008-02-18
SPB08P06P g 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); | v gs | -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 t p [s] z thjs [k/w] 0 10 20 30 40 50 0 40 80 120 160 t a [c] p tot [w] 0 2 4 6 8 10 0 40 80 120 160 t a [c] -i d [a] rev 1.4 page 4 2008-02-18
SPB08P06P g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -37v -5.5 v -4 v -4.5 v -5 v -6 v -20 v -10 v 0 100 200 300 400 500 600 700 800 900 1000 0 2 4 6 8 10 12 14 16 18 -i d [a] r ds(on) [m : ] 25 c 125 c 0 2 4 6 8 0123456 -v gs [v] -i d [a] 0 1 2 3 4 5 6 0246810 -i d [a] g fs [s] -4 v -4.5 v -5 v -5.5 v -6 v -7 v -20 v -10 v 0 2 4 6 8 10 12 14 16 18 20 02468 -v ds [v] -i d [a] rev 1.4 page 5 2008-02-18
SPB08P06P g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-6.2 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 0 100 200 300 400 500 600 700 800 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m : ] ciss coss crss 10 3 10 2 10 1 0 5 10 15 20 25 -v ds [v] c [pf] typ. min. max. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 175 c, typ 25 c, 98% 175 c, 98% 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 2 2.5 3 -v sd [v] i f [a] rev 1.4 page 6 2008-02-18
SPB08P06P g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 : v gs =f( q gate ); i d =-8.8 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 a 50 55 60 65 70 -80 -40 0 40 80 120 160 200 t j [c] -v br(dss) [v] 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 1 10 0 t av [s] -i av [a] 12 v 30 v 48 v 0 2 4 6 8 10 12 14 16 0 5 10 15 q gate [nc] v gs [v] rev 1.4 page 7 2008-02-18
rev 1.4 page 8 2008-02-18 SPB08P06P g published by infineon technologies ag 81726 munich, germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appl ication of the device, infineon technologies hereby disclaims any and all warranties and liabilitie s of any kind, including without limitation, warranties of non-infringement of intellect ual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact t he nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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